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Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

Mohammadi, V. (author), Nihtianov, S. (author)

The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the...

journal article 2016

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Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology

Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)

We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions,...

conference paper 2015

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A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)

This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...

journal article 2015

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Solution-processed polycrystalline silicon on paper

Trifunovic, M. (author), Shimoda, T. (author), Ishihara, R. (author)

Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...

journal article 2015

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Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)

We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...

journal article 2014

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A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

Lee, M.J. (author), Youn, J.S. (author), Park, K.Y. (author), Choi, W.Y. (author)

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger...

journal article 2014

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Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si

Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author), Ishihara, R. (author)

Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...

journal article 2013

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Improved light trapping in microcrystalline silicon solar cells by plasmonic back reflector with broad angular scattering and low parasitic absorption

Tan, H. (author), Sivec, L. (author), Yan, B. (author), Santbergen, R. (author), Zeman, M. (author), Smets, A.H.M. (author)

We show experimentally that the photocurrent of thin-film hydrogenated microcrystalline silicon (?c-Si:H) solar cells can be enhanced by 4.5?mA/cm2 with a plasmonic back reflector (BR). The light trapping performance is improved using plasmonic BR with broader angular scattering and lower parasitic absorption loss through tuning the size of...

journal article 2013

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Ultrahigh throughput plasma processing of free standing silicon nanocrystals with lognormal size distribution

Dogan, I. (author), Kramer, N.J. (author), Westermann, R.H.J. (author), Dohnalova, K. (author), Smets, A.H.M. (author), Verheijen, M.A. (author), Greogorkiewicz, T. (author), Van de Sanden, M.C.M. (author)

We demonstrate a method for synthesizing free standing silicon nanocrystals in an argon/silane gas mixture by using a remote expanding thermal plasma. Transmission electron microscopy and Raman spectroscopy measurements reveal that the distribution has a bimodal shape consisting of two distinct groups of small and large silicon nanocrystals with...

journal article 2013

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The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

Demontis, V. (author), Sanna, C. (author), Melskens, J. (author), Santbergen, R. (author), Smets, A.H.M. (author), Damiano, A. (author), Zeman, M. (author)

Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxide (SiOx:H) interlayers with different metals ...

journal article 2013

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Insights to emitter saturation current densities of boron implanted samples based on defects simulations

Mok, K.R.C. (author), Naber, R.C.G. (author), Nanver, L.K. (author)

Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of...

conference paper 2012

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A scattering model for nano-textured interfaces and its application in opto-electrical simulations of thin-film silicon solar cells

Jäger, K. (author), Fischer, M. (author), Van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)

We present a scattering model based on the scalar scattering theory that allows estimating far field scattering properties in both transmission and reflection for nano-textured interfaces. We first discuss the theoretical formulation of the scattering model and validate it for nano-textures with different morphologies. Second, we combine the...

journal article 2012

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A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology

Mandai, S. (author), Fishburn, M.W. (author), Maruyama, Y. (author), Charbon, E. (author)

We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at...

journal article 2012

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Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

Kind, R. (author), Van Swaaij, R.A.C.M.M. (author), Rubinelli, F.A. (author), Solntsev, S. (author), Zeman, M. (author)

The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active...

journal article 2011

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Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

Illiberi, A. (author), Kudlacek, P. (author), Smets, A.H.M. (author), Creatore, M. (author), Van de Sanden, M.C.M. (author)

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...

journal article 2011

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Modeling and optimization of white paint back reflectors for thin-film silicon solar cells

Lipovšek, B. (author), Kr?, J. (author), Isabella, O. (author), Zeman, M. (author), Topi?, M. (author)

Diffusive dielectric materials such as white paint have been demonstrated as effective back reflectors in the photovoltaic technology. In this work, a one-dimensional (1D) optical modeling approach for simulation of white paint films is developed and implemented in a 1D optical simulator for thin-film solar cells. The parameters of white paint,...

journal article 2010

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Integrated silicon optofluidic ring resonator

Testa, G. (author), Huang, Y. (author), Sarro, P.M. (author), Zeni, L. (author), Bernini, R. (author)

The feasibility of an integrated silicon optofluidic ring resonator is demonstrated. Liquid core antiresonant reflecting optical waveguides are used to realize a rectangular ring resonator with a multimode interference liquid core coupler between the ring and the bus waveguide. In this configuration the same waveguide used to confine the light...

journal article 2010

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Modulated surface textures for enhanced light trapping in thin-film silicon solar cells

Isabella, O. (author), Kr?, J. (author), Zeman, M. (author)

Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region....

journal article 2010

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Formation of thin-film crystalline silicon on glass observed by in-situ XRD

Westra, J.M. (author), Vavrunkova, V. (author), Sutta, P. (author), Van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)

Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC). As the grain size of SPC poly c-Si films will...

journal article 2010

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Characterization of pure boron depositions integrated in silicon diodes for nanometer-deep junction applications

Sarubbi, F. (author)

Doping technologies for formation of ultrashallow and highly-doped p+ junctions are continuously demanded to face the challenges in front-end processing that have emerged due to the aggressive downscaling of vertical dimensions for future semiconductor devices. As an alternative to implantations, current solutions are based on in-situ boron (B)...

doctoral thesis 2010