Architecture and applications of a high resolution gated SPAD image sensor

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 ?m. The fill-factor of 5% can be increased to 30% with the use of microlenses....

Video-rate fluorescence lifetime imaging camera with CMOS single-photon avalanche diode arrays and high-speed imaging algorithm

A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 ?m complementary metaloxide-semiconductor single-photon...

A high efficiency superconducting nanowire single electron detector

We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of a scanning electron microscope with an...

Real-time fluorescence lifetime imaging system with a 32 × 32 0.13?m CMOS low dark-count single-photon avalanche diode array

A compact real-time fluorescence lifetime imaging microscopy (FLIM) system based on an array of low dark count 0.13?m CMOS singlephoton avalanche diodes (SPADs) is demonstrated. Fast background-insensitive fluorescence lifetime determination is achieved by use of a recently proposed algorithm called ‘Integration for Extraction Method’ (IEM) [J....