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Source-gated transistors (SGTs) have potentially very high output impedance and low saturation voltages, which make them ideal as building blocks for high performance analog circuits fabricated in thin-film technologies. The quality of the saturation is greatly influenced by the design of the field-relief structure incorporated into the source electrode. Starting from measurements on self-aligned polysilicon structures, we show through numerical simulations how the field plate design can be improved. A simple source field plate around 1μm long situated several tens of nm above the semiconductor can increase the low-voltage intrinsic gain by more than two orders of magnitude and offers adequate tolerance to process variations in a moderately scaled thin-film SGT.

We report a split gate concept to enhance the performance of TrenchSuper Junction Thin Film Transistors (Trench SJ-HVTFT) fabricated inLow temperature Poly-silicon (LTPS) technology. Biasing the controland trench gates independently, breakdown voltages can be enhancedby 25 % while reducing the area specific on-state resistance by 13%.This technology enables incorporation of high voltage power conversion circuitry as well low voltage devices for embedded power management in displays and Lab on Chip applications.