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Modeling of the transient mobility in disordered organic semiconductors

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These file attachments have been under embargo and were made available to the public after the embargo was lifted on 31 October 2011.

Author: Germs, W.C. (Univ. Eindhoven) · Van der Holst, J.M.M. (Univ. Eindhoven) · Van Mensfoort, S.L.M. · Bobbert, P.A. (TU/e) · Coehoorn, R.
Type:article
Date:2011-10-31
Embargo lifted:2011-10-31
Publisher: APS (American Physical Society)
Institution: Philips Research
Source:Physical Review Letters; authors version
Identifier: MS 32.308
Keywords: carrier relaxation time · oled · oled device model · oled modelling
Rights: (c) APS (American Physical Society)

Abstract

In non-steady-state experiments, the electrical response of devicesbased on disordered organic semiconductors often shows a large transient contribution due to relaxation of the out-of-equilibrium charge-carrier distribution. We have developed a model describing this process, based only on the parameters describing the d.c. mobility andon Monte Carlo calculations of the effective conduction energy level. The model successfully predicts the relaxation-enhancement of thedifferential capacitance of sandwich-type devices based on a polyfluorene-copolymer. Generalization of the approach is expected to enable efficient modeling of relaxation effects in other types of experiments.

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