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65 nm CMOS Monolithically Integrated sub-THz transmitter

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These file attachments have been under embargo and were made available to the public after the embargo was lifted on 15 December 2011.

Author: Hu, X. (Univ. Uppsala) · Tripodi, L. · Matters-Kammerer, M.K. · Cheng, S. (Univ. Uppsala) · Rydberg, A. (Univ. Uppsala)
Type:article
Date:2011-12-15
Embargo lifted:2011-12-15
Publisher: IEEE
Institution: Philips Research
Source:IEEE Microwave and Wireless Components Letters; authors version
Identifier: MS 32.371
Keywords: 65-nm cmos · antenna · extremely wideband · nonlinear transmission line
Rights: (c) IEEE

Abstract

This letter presents a transmitter for sub-THz radiation (up to 160GHz), which consists of a nonlinear transmission line (NLTL) and anextremely wideband (EWB) slot antenna on a silicon substrate of lowresistivity (10 Ohms•cm). The fabrication was realized using a commercially available 65 nm CMOS process. On-wafer characterization of the whole transmitter, of the standalone EWB antenna and of the standalone NLTL is presented. Reflection measurements show that the standalone EWB antenna has a −10dB impedance bandwidth in the frequency bands 75-100 GHz and 220-325 GHz, which agrees very well with the simulation results. The simulated radiation patterns are also presented, indicating that the antenna has an ominidirectional radiation performance. The antenna shows also a maximum power gain of -9.5 dBi between 90 GHz and 120 GHz. The output power of the NLTL alone and of the NLTL integrated with the EWB antenna is measured up to 178GHz.

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