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Polymer LED Encapsulation by means of Plasma-Assisted ALD Al2O3 films

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These file attachments have been under embargo and were made available to the public after the embargo was lifted on 15 February 2011.

Author: Creatore, M. (Univ. Eindhoven) · Keuning, W. (Univ. Eindhoven) · Langereis, E. (Univ. Eindhoven) · Lifka, H. · Van de Weijer, P. · Van de Sanden, M.C.M. (Univ. Eindhoven) · Kessels, W.M.M. (Univ. Eindhoven)
Type:Conference paper
Date:2011-02-15
Embargo lifted:2011-02-15
Publisher: AVS (American Vacuum Society)
Institution: Philips Research
Source:ALD 2008: 8th International Conference on Atomic Layer Deposition, Bruges, Belgium, 29 June-2 July 2008
Identifier: MS 32.321
Keywords: ald · oled · pecvd oled · remote plasma ald
Rights: (c) 2008 AVS (American Vacuum Society)

Abstract

Within a 500h test, ALD encapsulated poly-LEDs show approximately half the black spot density of plasma deposited a-SiNx:H (300 nm thick) encapsulated devices. The black spot density is further reduced ifthe a-SiNx:H layer is coupled with an ALD layer and such decrease is accompanied by a massive reduction of the black spot area growth in time. A selection of electroluminescence measurements of encapsulated poly-LEDs point out a very promising application of ALD Al2O3 layers in the field of LED encapsulation and will be interpreted in terms of possible mechanisms related to film growth in multi-layer structures.

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