Print Email Facebook Twitter Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces Title Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces Author Illiberi, A. Kudlacek, P. Smets, A.H.M. Creatore, M. Van de Sanden, M.C.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Electrical Sustainable Energy Date 2011-06-17 Abstract We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion flux determines the generation rate of electron–hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron–hole pairs are discussed. Subject amorphous semiconductorselectron-hole recombinationelemental semiconductorsion beam effectspassivationsemiconductor thin filmssilicon To reference this document use: http://resolver.tudelft.nl/uuid:65a36cc5-3ed4-4970-b3cc-4934c62db82a DOI https://doi.org/10.1063/1.3601485 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/doi/10.1063/1.3601485 Source Applied Physics Letters, 98 (24), 2011 Part of collection Institutional Repository Document type journal article Rights © 2011 The Author(s)American Institute of Physics Files PDF Smets_2011.pdf 226.69 KB Close viewer /islandora/object/uuid%3A65a36cc5-3ed4-4970-b3cc-4934c62db82a/datastream/OBJ/view