A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Huang, Zhenyan; Tang, Z.; Yu, Xiao Peng; Shi, Zheng; Lin, Ling; Tan, Nick Nianxiong

doi:10.1109/TCSII.2021.3068283

A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Title

A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Author

Huang, Zhenyan (Zhejiang University)
Tang, Z. (TU Delft Electronic Instrumentation; Zhejiang University)
Yu, Xiao Peng (Zhejiang University)
Shi, Zheng (Zhejiang University)
Lin, Ling (Vango Technologies Inc., Hangzhou)
Tan, Nick Nianxiong (Zhejiang University)

Date

2021

Abstract

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.

Subject

BJT
CMOS temperature sensor
KC-DEM
duty-cycle
low relative inaccuracy

To reference this document use:

http://resolver.tudelft.nl/uuid:85b26ba3-8350-470b-a738-e41787ce0d17

DOI

https://doi.org/10.1109/TCSII.2021.3068283

ISSN

1549-7747

Source

IEEE Transactions on Circuits and Systems Part 2: Express Briefs, 68 (8), 2780-2784

Part of collection

Institutional Repository