Print Email Facebook Twitter The use of STEM imaging to analyze thickness variations due to electromigration-induced mass transport in thin polycrystalline nanobridges Title The use of STEM imaging to analyze thickness variations due to electromigration-induced mass transport in thin polycrystalline nanobridges Author Rudneva, M. Kozlova, T. Zandbergen, H.W. Faculty Applied Sciences Department Quantum Nanoscience Date 2014-10-16 Abstract Scanning transmission electron microscopy (STEM) imaging is applied to analyze the electromigration-induced thickness variations of thin polycrystalline films, It is shown that a high angle annular dark field (HAADF) detector is required to minimize the effect of diffraction contact. A further reduction of the diffraction contrast can be obtained using a tilt series. A correlation between the intensity of the STEM signal obtained with the HAADF detector and the real thickness value was found by comparing corresponding STEM and AFM images. STEM in combination with a tilt series can determine the material distribution in polycrystalline films and can accurately analyze 1-3 nm gaps of nanoelectrodes formed by electromigration. Subject STEMelectromigrationpolycrystalline nanobridgesmass transportnanoelectrode To reference this document use: http://resolver.tudelft.nl/uuid:f69fd242-2bd3-47da-bd4a-ec18ea16c82a Publisher Elsevier Embargo date 2014-10-17 ISSN 0304-3991 Source Ultramicroscopy, 134, 2014; Authors version Other version https://doi.org/10.1016/j.ultramic.2013.05.022 Part of collection Institutional Repository Document type journal article Rights (c) 2014 The Author(s) Files PDF M.Rudneva_Ultramicroscopy_15.pdf 826.88 KB Close viewer /islandora/object/uuid%3Af69fd242-2bd3-47da-bd4a-ec18ea16c82a/datastream/OBJ/view