A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

Babaie, M.; Kuo, F; Chen, H; Cho, L; Jou, C. P.; Hsueh, F. L.; Shahmohammadi, M.; Staszewski, R.B.

doi:10.1109/JSSC.2016.2551738

A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

Title

A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

Author

Babaie, M. (TU Delft Electronics)
Kuo, F (Taiwan Semiconductor Manufacturing Company (TSMC))
Chen, H (Taiwan Semiconductor Manufacturing Company (TSMC))
Cho, L (Taiwan Semiconductor Manufacturing Company (TSMC))
Jou, C. P. (Taiwan Semiconductor Manufacturing Company (TSMC))
Hsueh, F. L. (Taiwan Semiconductor Manufacturing Company (TSMC))
Shahmohammadi, M. (TU Delft Electronics)
Staszewski, R.B. (University College Dublin)

Date

2016

Abstract

We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode.

Subject

Bluetooth
CMOS digital integrated circuits
MOSFET circuits
constant current sources
digital phase locked loops
low-power electronics
oscillators
radio transmitters
radiofrequency integrated circuits
radiofrequency power amplifiers
1/f noise reduction
Bluetooth low-energy mode
CMOS transistors
all-digital PLL
class-E-F2 switching power amplifier
digitally controlled oscillator
direct DCO data modulation
efficiency 36 percent
energy-hungry RF circuits
fully integrated Bluetooth low-energy transmitter architecture
metal density
power 3.6 mW
power 5.5 mW
sampling rate reduction
size 28 nm
supply voltage reduction
switching current sources
threshold voltage
ultra-low power radios
CMOS integrated circuits
Inductors
Oscillators
Q-factor
Radio frequency
Radio transmitters
Switches
All-digital PLL
Bluetooth Low-Energy
Internet of Things (IoT)
class-E/F 2 power amplifier
low-power transmitter
low-voltage oscillator
switching current-source oscillator