Print Email Facebook Twitter Pattern transfer on vertical cavity sidewalls using SU8 Title Pattern transfer on vertical cavity sidewalls using SU8 Author Verhaar, T.M. Contributor Wei, J. (mentor) Sarro, P.M. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Date 2009-02-27 Abstract In this master thesis, a process to realize metal lines on the sidewall of high aspect ratio cavities is developed. As alternative to conventional photoresist, SU8 is used to define patterns on vertical sidewalls of deep cavities while maintaining compatibility with conventional IC processes. When transferring a pattern onto 3D structures, especially the coating process, where cavity filling and step coverage become important issues, requires specific attention. A highly uniform SU8 coating is obtained and, 20 m wide aluminium lines across 60 m deep cavities are realized. Problems related to overexposure and aluminium etching are presented as well. The resistance of the aluminium structures on top, bottom and sidewall of the cavities are measured and the results discussed. Subject su8har cavitiesmems To reference this document use: http://resolver.tudelft.nl/uuid:0925832a-1afd-4ee3-9a3c-1c35fcad2ad5 Publisher TU Delft, Electrical Engineering, Mathematics and Computer Science, Microelectronics Part of collection Student theses Document type master thesis Rights (c) 2009 Verhaar, T.M. Files PDF ewi_verhaar_2009.pdf 1.58 MB Close viewer /islandora/object/uuid:0925832a-1afd-4ee3-9a3c-1c35fcad2ad5/datastream/OBJ/view