Print Email Facebook Twitter Magnetic field effects on switching noise in a quantum point contact Title Magnetic field effects on switching noise in a quantum point contact Author Liefrink, F. Scholten, A.J. Dekker, C. Dijkhuis, J.I. Alphenaar, B.W. Van Houten, H. Foxon, C.T. Date 1992-12-15 Subject A7220M Galvanomagnetic and other magnetotransport effects semiconductors/insulatorsA7270 Noise processes and phenomena in electronic transportA7320A Surface states, band structure, electron density of statesA7340L Electrical properties of semiconductor to semiconductor contacts, p n junctions, and heterojunctionsaluminium compoundsconduction bandconduction band bottomconduction bandsfluctuationsg factorGaAs Al sub x Ga sub 1 x Asgallium arsenideIII V semiconductorsINSPECinterface electron statesLande g factormagnetic fieldmagnetic field effectsmodelnoisepoint contactsquantum Hall effectquantum Hall regimequantum point contactquantum size effectrandom noisesemiconductorsize effectswitching noisetemporal electrostatic fluctuationstransconductancezero magnetic field To reference this document use: http://resolver.tudelft.nl/uuid:105c83ec-6c79-4296-9ddb-2b49128dc0f1 ISSN 0163-1829 Source Physical review B.Condensed matter and materials physics 46(23), 15523-15525. (1992) Part of collection Institutional Repository Document type journal article Files PDF 868122.pdf 216.99 KB Close viewer /islandora/object/uuid:105c83ec-6c79-4296-9ddb-2b49128dc0f1/datastream/OBJ/view