Print Email Facebook Twitter A new single-photon avalanche diode in 90nm standard CMOS technology Title A new single-photon avalanche diode in 90nm standard CMOS technology Author Karami, M.A. Gersbach, M. Charbon, E. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2010-12-31 Abstract A single-photon avalanche diode (SPAD) fabricated in a 90nm standard CMOS process is reported. The detector comprises an octagonal multiplication region and a guard ring to prevent premature edge breakdown using exclusively standard layers. The proposed structure is the result of a systematic study aimed at miniaturization, while optimizing overall performance. The device exhibits a dark count rate of 16 kHz at room temperature, a maximum photon detection probability of 16% and the jitter of 398ps at a wavelength of 637nm. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures. Subject single-photon avalanche diode, CMOS image sensors, deep-submicron CMOS technology To reference this document use: http://resolver.tudelft.nl/uuid:24d1f195-6f0f-46cb-aed6-c738bbb02ab5 DOI https://doi.org/10.1117/12.859435 Publisher SPIE ISSN 0277-786X Source Proceedings of SPIE, 2010 vol. 7780 Part of collection Institutional Repository Document type conference paper Rights (c)2010 Karami, M.A.; Gersbach, M.; Charbon, E. Files PDF 7780Karami.pdf 634.12 KB Close viewer /islandora/object/uuid:24d1f195-6f0f-46cb-aed6-c738bbb02ab5/datastream/OBJ/view