Print Email Facebook Twitter Stimulated terahertz emission due to electronic Raman scattering in silicon Title Stimulated terahertz emission due to electronic Raman scattering in silicon Author Pavlov, S.G. Böttger, U. Hovenier, J.N. Abrosimov, N.V. Riemann, H. Zhukavin, R.K. Shastin, V.N. Redlich, B. Van der Meer, A.F.G. Hübers, H.W. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2009-04-30 Abstract Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) arsenic states. Optical thresholds of the Raman laser are similar to those observed for other silicon donor lasers. In addition, intracenter donor lasing has been observed when pumping on the dipole-forbidden 1s(A1)?2s transition. Subject elemental semiconductorsimpurity statesoptical pumpingRaman laserssemiconductor laserssiliconsubmillimetre wave lasers To reference this document use: http://resolver.tudelft.nl/uuid:2f5da6cf-6d35-4322-a43f-fc2895a6ccc1 DOI https://doi.org/10.1063/1.3119662 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v94/i17/p171112/s1 Source Applied Physics Letters, 94 (17), 2009 Part of collection Institutional Repository Document type journal article Rights (c) 2009 The Author(s); American Institute of Physics Files PDF Hovenier_2009.pdf 283.84 KB Close viewer /islandora/object/uuid:2f5da6cf-6d35-4322-a43f-fc2895a6ccc1/datastream/OBJ/view