CMOS-Compatible PureGaB Ge-on-Si APD pixel arrays

CMOS-Compatible PureGaB Ge-on-Si APD pixel arrays

Sammak, A. (TU Delft Electronic Components, Technology and Materials)
Aminian, Mahdi (Swiss Federal Institute of Technology)
Nanver, L.K. (Aalborg University)
Charbon-Iwasaki-Charbon, E. (TU Delft (OLD)Applied Quantum Architectures)

2016

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with each a size of 26 × 26 μm2. The processing of anode contacts at the anode perimeters leaving oxide covered PureGaB-only light-entrance windows, created perimeter defects that increased the vertical Ge volume but did not deteriorate the diode ideality. The dark current at 1 V reverse bias was below 35 μA/cm2 at room temperature and below the measurement limit of 2.5 × 10-2 μA/cm2 at 77 K. Spread in dark current levels and optical gain, that reached the range of 106 at 77 K, was lowest for the devices with largest perimeter. All device types were reliably operational in a wide temperature range from 77 K to room temperature. The spectral sensitivity of the detectors extended from visible to the telecom band with responsivities of 0.15 and 0.135 A/W at 850 and 940 nm, respectively.

Photodiodes
Silicon
Temperature measurement
Optical device fabrication
Optical imaging
CMOS integrated circuits
Optical sensors

http://resolver.tudelft.nl/uuid:400a6745-6fdd-4556-8ecd-65603b8fe60c

https://doi.org/10.1109/TED.2015.2457241

0018-9383

IEEE Transactions on Electron Devices, 63 (1), 92-99

Institutional Repository

journal article

© 2016 A. Sammak, Mahdi Aminian, L.K. Nanver, E. Charbon-Iwasaki-Charbon