Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

Cui, Z. (TU Delft Electronic Components, Technology and Materials; Chongqing University)
Zhang, Yingying (Chongqing University)
Yang, Qun (Chongqing University)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)
Chen, Xianping (Chongqing University)

2018

Interfacial properties of Cu/SiO₂ in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO₂. The Cu and SiO₂ are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO₂ system.

Load modeling
Loading
Substrates
Copper
Adhesives
Solid modeling
Computational modeling

http://resolver.tudelft.nl/uuid:4c742c25-ad37-4392-bb4b-16b6a69c577e

https://doi.org/10.1109/EDTM.2018.8421434

IEEE, Piscataway, NJ

978-1-5386-3712-8

Proceedings - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

EDTM 2018, 2018-03-13 → 2018-03-16, Kobe, Japan

Accepted author manuscript

Institutional Repository

conference paper

© 2018 Z. Cui, Yingying Zhang, Qun Yang, Kouchi Zhang, Xianping Chen