Single quantum dot nanowire photodetectors

Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

doi:doi:10.1063/1.3484962

Single quantum dot nanowire photodetectors

Title

Single quantum dot nanowire photodetectors

Author

Van Kouwen, M.P.
Van Weert, M.H.M.
Reimer, M.E.
Akopian, N.
Perinetti, U.
Algra, R.E.
Bakkers, E.P.A.M.
Kouwenhoven, L.P.
Zwiller, V.

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Date

2010-09-16

Abstract

We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the linear polarization direction of the incident light. The photocurrent is enhanced (suppressed) for a polarization parallel (perpendicular) to the axis of the nanowire (contrast 0.83). The active detection volume under resonant excitation is 7×103?nm3. These results show the promising features of quantum dots embedded in nanowire devices for electrical light detection at high spatial resolution.

Subject

arsenic compounds
III-V semiconductors
indium compounds
light polarisation
nanowires
photoconductivity
photodetectors
semiconductor quantum dots
semiconductor quantum wires
single electron devices