Print Email Facebook Twitter High efficiency IBC c-Si solar cells with poly-Si passivating contacts Title High efficiency IBC c-Si solar cells with poly-Si passivating contacts Author Zhang, Y. Contributor Isabella, O. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Department Sustainable Energy Technology Programme Photovoltaic Material and Device Date 2017-07-11 Abstract Crystalline silicon (c-Si) solar cells based on the polycrystalline silicon (poly-Si) passivating contact is becoming one of the most promising solar cell structures that enable high efficiency due to the minimization of metal contact recombination. The interdigitated back contact (IBC) crystalline silicon (c-Si) solar cells based on poly-Si passivating contacts is investigated in this thesis. The optimization of IBC solar cells with poly-Si passivating contacts, in this work, is focused on two aspects: (1) the enhanced passivation of poly-Si passivating contacts, and (2) the optimized front surface passivation. The optimization of poly-Si passivating contacts is investigated from the following three aspects: (1) the implantation dose of poly-Si as back surface field (BSF) and emitter, (2) the annealing condition to the ion-implanted poly-Si, and (3) the formation of tunnel oxide. Experimental results, obtained with symmetrical test structures, show that the J0 for n-type poly-Si samples achieved 4.5 fA/cm2 with implied VOC higher than 730 mV. For p-type poly-Si samples, J0 is 12.9 fA/cm2 and implied VOC is 714 mV. The optimization of front surface is achieved by optimizing the front surface field (FSF) ion-implantation dose and the passivation layers with double-sided textured n-type float zone wafers with symmetrical structure. The optimized J0 for the FSF, implanted with the dose of 1×〖10〗^14/〖cm〗^2, is as low as 6.5 fA/cm2 which is covered by a-Si:H/SiNX stack. The deposition conditions for a-Si:H and SiNX are 22nm at 250 °C and 75 nm at 400 °C, respectively. After the application of above mentioned improvements, the efficiency of our IBC poly-Si passivating contacts solar cells has reached 21.9% for 9 cm2 cell and 22.5% for 0.72 cm2 cell. Meanwhile, the highest FF of 83.2% achieved with 0.72 cm2 cell shows the high efficiency potential of our solar cells. Subject IBC crystalline silicon solar cellpoly-crystalline silicon passivating contacttunneling oxideion-implantation To reference this document use: http://resolver.tudelft.nl/uuid:5bc5235b-e32b-424d-91fd-195283a87ebd Embargo date 2019-07-11 Part of collection Student theses Document type master thesis Rights (c) 2017 Zhang, Y. Files PDF Yue Zhang-4491475 Master ... report.pdf 1.85 MB Close viewer /islandora/object/uuid:5bc5235b-e32b-424d-91fd-195283a87ebd/datastream/OBJ/view