Titanium nitride: A new Ohmic contact material for n-type CdS

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden, A.
Battjes, H.
Machunze, R.
Dam, B.
Van de Krol, R.

Mechanical, Maritime and Materials Engineering

2011-08-08

In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath deposition, have a hexagonal crystal structure and are polycrystalline, mostly with a (002) texture. The thickness of the films is ?600 nm, and the donor density is 1.9?×?1016 cm?3. The donor density increases to 1.5?×?1017 cm?3 upon annealing. The contact resistivity of sputtered TiN on CdS is found to be 4.7?±?0.6 ? cm2. This value is sufficiently small to avoid large resistive losses in most CdS device applications. To demonstrate the use of TiN in a CdS device, a Au/CdS/TiN Schottky diode was constructed. The diode has a potential barrier of 0.69 V and an ideality factor of 2.2.

cadmium compounds
contact resistance
II-VI semiconductors
liquid phase deposition
ohmic contacts
Schottky diodes
semiconductor thin films
sputter deposition
titanium compounds

http://resolver.tudelft.nl/uuid:69c24aab-149e-469c-b324-13182c603da0

https://doi.org/10.1063/1.3615946

American Institute of Physics

0021-8979

http://link.aip.org/link/doi/10.1063/1.3615946

Journal of Applied Physics, 110 (3), 2011

Institutional Repository

journal article

© 2011 The Author(s)
American Institute of Physics