Print Email Facebook Twitter Strong modification of the reflection from birefringent layers of semiconductor nanowires by nanoshells Title Strong modification of the reflection from birefringent layers of semiconductor nanowires by nanoshells Author Diedenhofen, S.L. Algra, R.E. Bakkers, E.P.A.M. Gómez Rivas, J. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2011-11-16 Abstract The propagation of light in layers of vertically aligned nanowires is determined by their unique and extreme optical properties. Depending on the nanowire filling fraction and their diameter, layers of nanowires form strongly birefringent media. This large birefringence gives rise to sharp angle dependent peaks in polarized reflection. We demonstrate experimentally the tunability of the reflection by adding shells of SiO2 with thicknesses ranging from 10?nm to 30?nm around the nanowires. The strong modification of the reflection peaks renders nanowire layers as a promising candidate for sensing applications. Subject birefringencegallium compoundsIII-V semiconductorsnanowiresrefractive indexsilicon compounds To reference this document use: http://resolver.tudelft.nl/uuid:6a883fce-653d-493f-ae47-80ab43d8179a DOI https://doi.org/10.1063/1.3662393 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/doi/10.1063/1.3662393 Source Applied Physics Letters, 99 (20), 2011 Part of collection Institutional Repository Document type journal article Rights (c) 2011 The Author(s)American Institute of Physics Files PDF ApplPhysLett_99_2011081.pdf 383.93 KB Close viewer /islandora/object/uuid:6a883fce-653d-493f-ae47-80ab43d8179a/datastream/OBJ/view