Print Email Facebook Twitter Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge-Si Nanowires Title Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge-Si Nanowires Author Ridderbos, Joost (University of Twente) Braun, M. (TU Delft QuTech; Kavli institute of nanoscience Delft) de Vries, F.K. (University of Twente) Shen, J. (TU Delft QRD/Kouwenhoven Lab; Kavli institute of nanoscience Delft) Li, Ang (Eindhoven University of Technology) Kölling, S. (Eindhoven University of Technology) Verheijen, Marcel A. (Eindhoven University of Technology) Brinkman, Alexander (University of Twente) van der Wiel, Wilfred G. (University of Twente) Bakkers, E.P.A.M. (Eindhoven University of Technology) Zwanenburg, Floris A. (University of Twente) Date 2020 Abstract We show a hard superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of 250 mT, an important step toward creating and detecting Majorana zero modes in this system. A hard gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at 180 °C during which aluminum interdiffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature (TC = 0.9 K) and a higher critical field (BC = 0.9-1.2 T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature (TC = 2.9 K) and critical field (BC = 3.4 T) is found. The small size of these diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction. Subject Ge−Si nanowirehard superconducting gapJosephson junctionMajorana quasiparticleSuperconductor−semiconductor hybrid devicetopological superconductivity To reference this document use: http://resolver.tudelft.nl/uuid:71e8d032-3990-4d1c-a98e-c96ef417f78b DOI https://doi.org/10.1021/acs.nanolett.9b03438 ISSN 1530-6984 Source Nano Letters: a journal dedicated to nanoscience and nanotechnology, 20 (1), 122-130 Part of collection Institutional Repository Document type journal article Rights © 2020 Joost Ridderbos, M. Braun, F.K. de Vries, J. Shen, Ang Li, S. Kölling, Marcel A. Verheijen, Alexander Brinkman, Wilfred G. van der Wiel, E.P.A.M. Bakkers, Floris A. Zwanenburg Files PDF acs.nanolett.9b03438.pdf 2.48 MB Close viewer /islandora/object/uuid:71e8d032-3990-4d1c-a98e-c96ef417f78b/datastream/OBJ/view