Print Email Facebook Twitter Surface passivation of n -type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks Title Surface passivation of n -type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks Author van de Loo, B.W.H. (Eindhoven University of Technology) Ingenito, A. (TU Delft Photovoltaic Materials and Devices) Verheijen, M.P.A.M. (Eindhoven University of Technology) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Kessels, W. M.M. (Eindhoven University of Technology) Department Electrical Sustainable Energy Date 2017 Abstract Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells. To reference this document use: http://resolver.tudelft.nl/uuid:7440b130-533f-4627-b577-9a40a4350dea DOI https://doi.org/10.1063/1.4989824 Embargo date 2018-06-01 ISSN 0003-6951 Source Applied Physics Letters, 110 (26), 1-5 Part of collection Institutional Repository Document type journal article Rights © 2017 B.W.H. van de Loo, A. Ingenito, M.P.A.M. Verheijen, O. Isabella, M. Zeman, W. M.M. Kessels Files PDF 27444517.pdf 879.74 KB Close viewer /islandora/object/uuid:7440b130-533f-4627-b577-9a40a4350dea/datastream/OBJ/view