A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

Hu, Z.; Vlachogiannakis, G.; Pertijs, M.A.P.; de Vreede, L.C.N.; Spirito, M.

doi:10.1109/MWSYM.2018.8439438

A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

Title

A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

Author

Hu, Z. (TU Delft Electronics)
Vlachogiannakis, G. (TU Delft Electronics)
Pertijs, M.A.P. (TU Delft Electronic Instrumentation)
de Vreede, L.C.N. (TU Delft Electronics)
Spirito, M. (TU Delft Electronics)

Contributor

Kanamaluru, S. (editor)

Date

2018

Abstract

A 0.14-μ m CMOS 2-D permittivity imaging matrix prototype operating at microwave frequencies is presented. It comprises 25 permittivity-sensing pixels, each consisting of a sensing patch connected to a dedicated RF bridge. A trans-conduct-ance stage converts the imbalance voltage to a current signal, subsequently down-converted to an intermediate frequency and sampled. The implemented sensor matrix shows precise permittivity measurements over a range of 0.1-10 GHz, and successfully demonstrates permittivity contrast with a resolution of 0.1 - 2.3 from 0.1 to 10 GHz when the matrix is interfaced with various dielectrics. Owing to the matrix implementation a sub-mm, permittivity discontinuity is easily resolved by the presented sensor device.

Subject

Bridge circuits
Chemical and biological sensors
CMOS integrated circuits
Microwave sensors
Permittivity

To reference this document use:

http://resolver.tudelft.nl/uuid:83aef6ec-9477-404d-bea2-43dc81dca8c6

DOI

https://doi.org/10.1109/MWSYM.2018.8439438

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

ISBN

978-1-5386-5067-7

Source

Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018, 2018-June