Print Email Facebook Twitter Position-controlled [100] InP nanowire arrays Title Position-controlled [100] InP nanowire arrays Author Wang, J. Plissard, S. Hocevar, M. Vu, T.T.T. Zehender, T. Immink, G.G.W. Verheijen, M.A. Haverkort, J. Bakkers, E.P.A.M. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2012-01-30 Abstract We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties. Subject arrayselectron beam lithographyetching, III-V semiconductorsindium compoundsmicro-opticsMOCVDnanofabricationnanowiresphotoluminescencescanning electron microscopysemiconductor growthtransmission electron microscopyvapour phase epitaxial growth To reference this document use: http://resolver.tudelft.nl/uuid:84120ccb-4358-4e66-96fa-97b0ecaf70fc DOI https://doi.org/10.1063/1.3679136 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/doi/10.1063/1.3679136 Source Applied Physics Letters, 100 (5), 2012 Part of collection Institutional Repository Document type journal article Rights (c) 2012 The Author(s)American Institute of Physics Files PDF ApplPhysLett_100_0531071.pdf 1.16 MB Close viewer /islandora/object/uuid:84120ccb-4358-4e66-96fa-97b0ecaf70fc/datastream/OBJ/view