Print Email Facebook Twitter Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon Title Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon Author Pavlov, S.G. Hübers, H.W. Haas, P.M. Hovenier, J.N. Klaassen, T.O. Zhukavin, R.Kh. Shastin, V.N. Carder, D.A. Redlich, B. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2008-10-06 Abstract Noncascade relaxation of photoexcited electrons on ionized donor centers has been observed in silicon doped by arsenic (Si:As) at low temperatures. Emission spectra of the Si:As terahertz intracenter laser give evidence of specific channels for the electron relaxation through low-lying donor states. The dominating relaxation channels strongly depend on the initial energy distribution of the nonequilibrium carriers. A relaxation step may exceed not only the energy gap to an adjacent lower-lying donor level but also the characteristic energy step as set by the energy and momentum conservation requirements for intravalley acoustic phonons. Subject arsenicelectron relaxation timeenergy gapimpurity statesluminescencephotoexcitation To reference this document use: http://resolver.tudelft.nl/uuid:9b4c0d20-fad4-4053-99c6-497ef4a0960d Publisher American Physical Society ISSN 0163-1829 Source Physical Review B, 78 (16), 2008 Part of collection Institutional Repository Document type journal article Rights (c) 2008 The Author(s) ; American Physical Society Files PDF Hovenier_2008.pdf 437.68 KB Close viewer /islandora/object/uuid:9b4c0d20-fad4-4053-99c6-497ef4a0960d/datastream/OBJ/view