Print Email Facebook Twitter Heterointerface effects on the charging energy of the shallow D? ground state in silicon: Role of dielectric mismatch Title Heterointerface effects on the charging energy of the shallow D? ground state in silicon: Role of dielectric mismatch Author Calderón, M.J. Verduijn, J. Lansbergen, G.P. Tettamanzi, G.C. Rogge, S. Koiller, B. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2010-08-17 Abstract Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. Experimental results indicate a strong reduction in the charging energy of isolated As dopants in Si nonplanar field effect transistors relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured reduction in the charging energy (measurements also presented here) may be due to a combined effect of the insulator screening and the proximity of metallic gates. To reference this document use: http://resolver.tudelft.nl/uuid:bd15e1e9-f320-4366-b3cc-f94ed9f47b50 DOI https://doi.org/10.1103/PhysRevB.82.075317 Publisher American Physical Society ISSN 1098-0121 Source http://prb.aps.org/abstract/PRB/v82/i7/e075317 Source Physical Review B, 82 (7), 2010 Part of collection Institutional Repository Document type journal article Rights (c) 2010 The Author(s); American Physical Society Files PDF Verduijn-2_2010.pdf 197.24 KB Close viewer /islandora/object/uuid:bd15e1e9-f320-4366-b3cc-f94ed9f47b50/datastream/OBJ/view