Print Email Facebook Twitter On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates Title On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates Author Wank, M.A. Van Swaaij, R.A.C.M.M. Van de Sanden, M.C.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Electrical Sustainable Energy Date 2009-07-15 Abstract The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the observed roughness development in this phase. After coalescence we observe two distinct phases in the roughness evolution and highlight trends which are incompatible with the idea of dominant surface diffusion. Alternative, nonlocal mechanisms such as the re-emission effect are discussed, which can partly explain the observed incompatibilities. Subject amorphous semiconductorselemental semiconductorsellipsometryhydrogenhydrogenationplasma CVDsemiconductor growthsemiconductor thin filmssiliconsurface diffusionsurface roughness To reference this document use: http://resolver.tudelft.nl/uuid:c8c7bcd2-3ff3-4390-96bd-51954799aefc DOI https://doi.org/10.1063/1.3179151 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v95/i2/p021503/s1 Source Applied Physics Letters, 95 (2), 2009 Part of collection Institutional Repository Document type journal article Rights (c) 2009 The Author(s); American Institute of Physics Files PDF Wank_2009.pdf 231.16 KB Close viewer /islandora/object/uuid:c8c7bcd2-3ff3-4390-96bd-51954799aefc/datastream/OBJ/view