Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

De Boer, R.W.I.
Iosad, N.N.
Stassen, A.F.
Klapwijk, T.M.
Morpurgo, A.F.

Applied Sciences

Kavli Institute of Nanoscience

2005-01-07

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than 10?9?A/cm2. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.

organic semiconductors
dielectric materials
insulated gate field effect transistors
leakage currents
carrier density
semiconductor-insulator boundaries

http://resolver.tudelft.nl/uuid:e2bd770e-f49d-4e79-976d-a3bf7231b267

American Institute of Physics

0003-6951

http://link.aip.org/link/APPLAB/v86/i3/p032103/s1

Applied Physics Letters, 86 (3), 2005

Institutional Repository

journal article

(c) 2005 The Author(s); American Institute of Physics