Print Email Facebook Twitter Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap Title Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap Author Degli Esposti, D. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Paquelet Wuetz, B. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Fezzi, V. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Lodari, M. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Sammak, A. (TU Delft BUS/TNO STAFF; TU Delft QuTech Advanced Research Centre) Scappucci, G. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Date 2022 Abstract We grow 28Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, 28Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K, we measure a high mean mobility of (1.8 ± 0.5) × 10 5 cm2/V s and a low mean percolation density of (9 ± 1) × 10 10 cm-2. From the analysis of Shubnikov-de Haas oscillations at T = 190 mK, we obtain a long mean single particle relaxation time of (8.1 ± 0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5 ± 0.6) × 10 4 cm2/V s and (40 ± 3) μ eV, respectively, and a small mean Dingle ratio of (2.3 ± 0.2), indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits. To reference this document use: http://resolver.tudelft.nl/uuid:e7fbc337-f9e2-4d28-ad1b-3dd8139f0f05 DOI https://doi.org/10.1063/5.0088576 ISSN 0003-6951 Source Applied Physics Letters, 120 (18) Bibliographical note Accepted Author Manuscript Part of collection Institutional Repository Document type journal article Rights © 2022 D. Degli Esposti, B. Paquelet Wuetz, V. Fezzi, M. Lodari, A. Sammak, G. Scappucci Files PDF APL22_AR_01350.pdf 1.05 MB Close viewer /islandora/object/uuid:e7fbc337-f9e2-4d28-ad1b-3dd8139f0f05/datastream/OBJ/view