Print Email Facebook Twitter High-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts Title High-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts Author Yang, G. (TU Delft Photovoltaic Materials and Devices) Guo, Peiqing (Student TU Delft) Procel Moya, P.A. (TU Delft Photovoltaic Materials and Devices) Limodio, G. (TU Delft Photovoltaic Materials and Devices) Weeber, A.W. (TU Delft Photovoltaic Materials and Devices; ECN Solar Energy) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Department Electrical Sustainable Energy Date 2018 Abstract In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are efficient in preventing carriers’ recombination. To minimize the reflection losses, we developed a novel modulated surface texturing (MST) structure as anti-reflection coating (ARC). It is obtained by superposing a nano-textured SiO2 layer on the conventional micro-textured pyramids, which are passivated with a-Si:H / SiNx:H layers. This approach decouples the light harvesting from the Si surface passivation, which potentially results in the highest possible optical and electrical performances of the solar cells. The reflectance (R) of the MST-ARC is very close to that of the high-aspect ratio nano-structured silicon (black-Silicon), achieving R < 1% between 450 and 1000 nm. The J0 of MST-ARC passivated Si surface (6.3 fA/cm2) is the same as that of standard a-Si:H/SiNx:H layers passivated pyramidally-textured Si surface. By applying this novel MST-ARC in our IBC solar cell, the highest JSC observed in a device is 42.2 mA/cm2 with a VOC as high as 701 mV. A spectral response enhancement in case of the MST-ARC cell is observed over the whole wavelength range with respect to the cell with standard SiNx:H ARC. The highest efficiency achieved in this work is 23.0%, with the potential to reach 24.0% in short term by using more conductive metal fingers. Subject Carrier selective passivating contactIBC c-Si solar cellsLight in-couplingPoly-silicon To reference this document use: http://resolver.tudelft.nl/uuid:ea55ccaf-b8c4-47dc-80fa-8654164144d0 DOI https://doi.org/10.1016/j.solmat.2018.06.019 ISSN 0927-0248 Source Solar Energy Materials & Solar Cells, 186, 9-13 Bibliographical note Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. Part of collection Institutional Repository Document type journal article Rights © 2018 G. Yang, Peiqing Guo, P.A. Procel Moya, G. Limodio, A.W. Weeber, O. Isabella, M. Zeman Files PDF 45824955_SOLMAT_D_18_0038 ... r_Pure.pdf 632.51 KB Close viewer /islandora/object/uuid:ea55ccaf-b8c4-47dc-80fa-8654164144d0/datastream/OBJ/view