Print Email Facebook Twitter The design of a 16*16 pixels CMOS image sensor with 0.5 e- RMS noise Title The design of a 16*16 pixels CMOS image sensor with 0.5 e- RMS noise Author Yao, Q. Contributor Theuwissen, A.J.P. (mentor) Dierickx, B. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics & Computer Engineering Programme Microelectronics Date 2013-06-28 Abstract Low noise image sensors can see images by just a few photons have a wide application in both the scientific and economic fields. This thesis presents a design of a 16*16 pixels CMOS image sensor with a target noise level in the order of 0.5 electrons RMS in 0.18?m technology, which has a potential to catch a large amount of low light imaging market. First the novel 5T pinned photodiode low noise pixel is shown as well as the method cycling pMOS transistor well voltage between accumulation and inversion to shape the spectrum of flicker noise like white noise and to be decreased by oversampling. Then the readout circuitry with the sigma-delta ADCs and bidirectional digital counters are described. Correlated double sampling and oversampling technology are executed to decrease the quantization noise and thermal noise. At last, the system simulation, noise simulation results are given as well as the PCB test system. Subject low noiseCMOS image sensorsigma-delta ADCdigital counter To reference this document use: http://resolver.tudelft.nl/uuid:f07af013-4bc5-454e-91dd-be7e37f44c17 Embargo date 2013-07-28 Part of collection Student theses Document type master thesis Rights (c) 2013 Yao, Q. Files PDF MSc_thesis_QYao.pdf 1.91 MB Close viewer /islandora/object/uuid:f07af013-4bc5-454e-91dd-be7e37f44c17/datastream/OBJ/view