Print Email Facebook Twitter Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization Title Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization Author Arslan, A. Kahlert, H.J. Oesterlin, P. Mofrad, D.T. Ishihara, R. Beenakker, C.I.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2012-12-31 Abstract 625 nm thick a-Si layer was crystallized by using microsecond pulsed green laser with wavelength of 515 nm. At least 8 ?m size grains were formed using location controlled single grain technique at room temperature. Energy density window for crystallization and ablation were compared for pulse durations of 300 ns, 1000 ns and 1200 ns. To reference this document use: http://resolver.tudelft.nl/uuid:f18af0a9-f79b-48d3-9a15-67288ce8d37b DOI https://doi.org/10.1149/05008.0035ecst Publisher The Electrochemical Society ISSN 1938-5862 Source ECS Transactions, 50 (8), 2013 Part of collection Institutional Repository Document type journal article Rights © 2013 The Electrochemical Society Files PDF Arslan_2013.pdf 3.61 MB Close viewer /islandora/object/uuid:f18af0a9-f79b-48d3-9a15-67288ce8d37b/datastream/OBJ/view