Controlling P and B diffusion during polysilicon formation

Controlling P and B diffusion during polysilicon formation

Lamers, M.W.P.E. (ECN Solar Energy)
Bronsveld, Paula (ECN Solar Energy)
Liu, Ji (ECN Solar Energy)
Weeber, A.W. (TU Delft Photovoltaic Materials and Devices; ECN Solar Energy)

Brendel, Rolf (editor)
Poortmans, Jef (editor)
Weeber, Arthur (editor)
Hahn, Giso (editor)
Ballif, Christophe (editor)
Glunz, Stefan (editor)
Ribeyron, Pierre-Jean (editor)

2018

High quality passivating contacts can be realized by using the combination of a thin interfacial oxide (SiO_x) and doped polysilicon (polySi). Recombination losses are minimized by providing very good passivation between the thin hydrogenated oxide and the cSi, a high field effect by the highly doped polySi [1-2], combined with the low level penetration of dopants in the wafer [2-3]. To realize this low level in-diffusion of dopants, several interacting options are evaluated in this work: the quality of the thin oxide layer (growth method), combined with a diffusion blocking method (nitridation), doping concentration levels in the polySi and temperature of diffusion. It is shown that for Phosphorus (P)-doped polySi, in-diffusion can be reduced by adding an i-layer in between the oxide and the highly doped polySi, lowering the overall doping level in the system slightly. For Boron (B)-doped polySi, in-diffusion can be blocked by nitridation of the SiO2 layer.

http://resolver.tudelft.nl/uuid:f54e922a-bc7e-4af0-8ccd-ad985b5595c7

https://doi.org/10.1063/1.5049274

American Institute of Physics

978-073541715-1

SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics, 1999

SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics, 2018-03-19 → 2018-03-21, Lausanne, Switzerland

Institutional Repository

conference paper

© 2018 M.W.P.E. Lamers, Paula Bronsveld, Ji Liu, A.W. Weeber