Print Email Facebook Twitter Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP Title Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP Author Carlström, C.F. Van der Heijden, R. Andriesse, M.S.P. Karouta, F. Van der Heijden, R.W. Van der Drift, E.W.J.M. Salemink, H.W.M. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2008-09-05 Abstract An extensive investigation has been performed on inductively coupled plasma etching of InP. An important motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals. The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. The influence of different process parameters such as gas flows, temperature, pressure, ion energy, and inductively coupled plasma power on the hole geometry is presented. It is concluded that photonic crystals can be etched with Cl2 only; however, temperature and pressure control is critical. Adding passivation gases largely broadens the window in the parameter space for hole etching. Most importantly, etching of narrow holes can be carried out at higher temperatures where the etching is mass limited and spontaneous etching of InP by Cl2 occurs. Subject III-V semiconductorsindium compoundspassivationphotonic crystalssputter etchingindium phosphidechlorine To reference this document use: http://resolver.tudelft.nl/uuid:fd13a0aa-f5bd-4187-aad0-bb532eb21635 Publisher American Vacuum Society ISSN 1071-1023 Source https://doi.org/10.1116/1.2968696 Source Journal of Vacuum Science & Technology B, 26 (5), 2008 Part of collection Institutional Repository Document type journal article Rights © 2008 American Vacuum Society Files PDF Andriesse_2008.pdf 889.8 KB Close viewer /islandora/object/uuid:fd13a0aa-f5bd-4187-aad0-bb532eb21635/datastream/OBJ/view