Print Email Facebook Twitter Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators Title Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators Author Thomas, S. (TU Delft EKL-Users) Jovic, A. (TU Delft Electronic Components, Technology and Materials) Morana, B. (TU Delft EKL-Users) Buja, F. (TU Delft Micro and Nano Engineering) Gkouzou, A. (TU Delft Micro and Nano Engineering) Pandraud, G. (TU Delft EKL Processing) Sarro, P.M. (TU Delft Electronic Components, Technology and Materials) Date 2016 Abstract In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained. Subject actuatorscoefficent of thermal exoansionsilicon carbide To reference this document use: http://resolver.tudelft.nl/uuid:3dcea32a-fdca-4f13-87b8-bddf6deded39 DOI https://doi.org/10.1016/j.proeng.2016.11.379 ISSN 1877-7058 Source Procedia Engineering, 168, 1144-1147 Event Eurosensors 2016, 2016-09-04 → 2016-09-07, Budapest, Hungary Part of collection Institutional Repository Document type journal article Rights © 2016 S. Thomas, A. Jovic, B. Morana, F. Buja, A. Gkouzou, G. Pandraud, P.M. Sarro Files PDF 29537638.pdf 589.66 KB Close viewer /islandora/object/uuid:3dcea32a-fdca-4f13-87b8-bddf6deded39/datastream/OBJ/view