Print Email Facebook Twitter Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition Title Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition Author Durrani, Z. A.K. (Imperial College London) Jones, M. E. (Imperial College London) Wang, C. (Imperial College London) Scotuzzi, M. (TU Delft ImPhys/Charged Particle Optics) Hagen, C.W. (TU Delft ImPhys/Charged Particle Optics) Date 2017-11-03 Abstract Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ∼20 nm, integrated within ∼100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ∼20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Roomerature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature. Subject Electron beam induced depositionsingle electron transistorsingle electron transport To reference this document use: http://resolver.tudelft.nl/uuid:573183d0-925f-4327-84d7-6f6dc0818026 DOI https://doi.org/10.1088/1361-6528/aa9356 Embargo date 2018-11-03 ISSN 0957-4484 Source Nanotechnology, 28 (47) Part of collection Institutional Repository Document type journal article Rights © 2017 Z. A.K. Durrani, M. E. Jones, C. Wang, M. Scotuzzi, C.W. Hagen Files PDF Electron_transport_RT_SE_ ... _et_al.pdf 5.97 MB Close viewer /islandora/object/uuid:573183d0-925f-4327-84d7-6f6dc0818026/datastream/OBJ/view