Kinetics of tungsten low-pressure chemical-vapor deposition using WF6 and SiH4 studied by in situ growth-rate measurements

Title

Kinetics of tungsten low-pressure chemical-vapor deposition using WF6 and SiH4 studied by in situ growth-rate measurements

 Author

Ammerlaan, J.A.M.
Van der Put, P.J.
Schoonman, J.

Date

1993

 Subject

Thin film
Crystal growth
Experimental study
Tungsten
Chemical vapor deposition
Low pressure
Kinetics
In situ
Process control

 To reference this document use:

http://resolver.tudelft.nl/uuid:6742381d-409c-4065-9dbd-5fca2178ed83

 ISSN

0021-8979

 Source

Journal of Applied Physics 73(9), 4631-4636. (1993)

 Part of collection

Institutional Repository

 Document type

journal article
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