Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy

Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy

Sakic, A.
Nanver, L.K.
van Veen, G.
Kooijman, K.
Vogelsang, P.
Scholtes, T.L.M.
De Boer, W.
Wien, W.H.A.
Milosavljevic, S.
Heerkens, C.
Knezevic, T.
Spee, I.

Electrical Engineering, Mathematics and Computer Science

Microelectronics

2011-11-14

The low-energy electron detectors presented in this work have near theoretical electron signal gain at low energies measured down to 200 eV and high-speed response due to the following technological steps: (i) chemical vapor deposition (CVD) of boron layers (PureB layers) proven to form an ideal nm-deep p+n junction with the outstanding sensitivity to low-energy electrons [1], and (ii) defect-free, ultra-low doped, 40 ?m thick n-- epitaxial layer which facilitates capacitance values as low as 3 pF/mm2. The fabricated detectors have been placed in SEMs and the resulting high-resolution images, robustness to the electron irradiation, and high scanning speeds make them promising candidates for the future solid-state backscatteredelectron (BSE) detectors.

pure boron depositions, electron detection, lowenergy electrons, backscattered electrons, high efficiency detection, SEM detectors

http://resolver.tudelft.nl/uuid:70dd658f-eab3-46fb-8485-29b1db43c785

Technology Foundation STW

Proceedings ICT.Open: Micro Technology and Micro Devices SAFE 2011, Veldhoven, 14-15 Nov. 2011, 1-4

Institutional Repository

conference paper

(c) 2011 The Authors