Print Email Facebook Twitter Current-induced nanogap formation and graphitization in boron-doped diamond films Title Current-induced nanogap formation and graphitization in boron-doped diamond films Author Seshan, V. Arroyo, C.R. Castellanos-Gomez, A. Prins, F. Perrin, M.L. Janssens, S.D. Haenen, K. Nesládek, M. Sudhölter, E.J.R. De Smet, L.C.P.M. Van der Zant, H.S.J. Dulic, D. Faculty Applied Sciences Department ChemE/Chemical Engineering Date 2012-11-09 Abstract A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to ?1?nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation. Subject annealingborondiamondelemental semiconductorsenergy gapgraphitegraphitisationnanofabricationnanostructured materialsRaman spectrascanning electron microscopy To reference this document use: http://resolver.tudelft.nl/uuid:9442760e-ab58-4faf-8818-43f05e6dd536 DOI https://doi.org/10.1063/1.4766346 Publisher American Institute of Physics ISSN 0003-6951 Source http://apl.aip.org/resource/1/applab/v101/i19/p193106_s1 Source Applied Physics Letters, 101 (19), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 American Institute of Physics Files PDF Seshan_2012.pdf 1 MB Close viewer /islandora/object/uuid:9442760e-ab58-4faf-8818-43f05e6dd536/datastream/OBJ/view