Single-Shot Readout of Singlet-Triplet Qubit States in a Si/SiGe Double Quantum Dot

Journal article (2012)
Department
QN/Quantum Nanoscience (AS) (TU Delft)
Copyright: © 2013 The Electrochemical Society
DOI: https://doi.org/doi:10.1149/05009.0655ecst
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Published Date

31-12-2012

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Source:

ECS Transactions, 50 (9), 2013

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

The spin singlet and triplet states of a two-electron double quantum dot can be used to form a logical qubit that combines fast manipulation and a spin readout mechanism. We demonstrate single-shot readout of the two-electron states of a Si/SiGe double quantum dot using a quantum-point-contact charge sensor and spin-to-charge conversion. From the statistics of multiple singleshot measurements, we find the lifetimes of the spin states as a function of in-plane magnetic field. The lifetimes of the singlet and T0 triplet are both ~10ms and insensitive to magnetic field. The Ttriplet lifetime increases with magnetic field, reaching ~3s at 1T.