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Ishihara, R. (author), Chen, T. (author), Baiano, A. (author), Mofrad, M.R. (author), Beenakker, C.I.M. (author)
We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated...
journal article 2011