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Ishihara, R. (author), Chen, T. (author), Van der Zwan, M. (author), He, M. (author), Schellevis, H. (author), Beenakker, K. (author)
Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct...
conference paper 2011
document
Ishihara, R. (author), Baiano, A. (author), Chen, T. (author), Derakhshandeh, J. (author), Tajari Mofrad, M.R. (author), Danesh, M. (author), Saputra, N. (author), Long, J. (author), Beenakker, C.I.M. (author)
Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...
journal article 2009
document
Chen, T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)
journal article 2008
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Chen, T. (author), Wu, M.Y. (author), Ishihara, R. (author), Nomura, K. (author), Kamiya, T. (author), Hosono, H. (author), Beenakker, C.I.M. (author)
In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at...
journal article 2011
document
Ishihara, R. (author), Chen, T. (author), Baiano, A. (author), Mofrad, M.R. (author), Beenakker, C.I.M. (author)
We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated...
journal article 2011
document
Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)
We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...
journal article 2014
document
Chen, T. (author), Ishihara, R. (author), Beenakker, K. (author)
In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...
journal article 2010
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