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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author)
conference paper 2012
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Honjo, Y. (author), Moro, H. (author), Ishihara, M. (author), Otake, Y. (author)
The ministry of land, infrastructures, transportation and tourism (MLIT) of the Japanese government maintains governmental managed river levee for the safety against flood whose total length is more than 10,000 km. The design standard of river levee had been traditionally done based on so called shape based specification, where levee is judged...
conference paper 2015
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Ishihara, R. (author), Chen, T. (author), Van der Zwan, M. (author), He, M. (author), Schellevis, H. (author), Beenakker, K. (author)
Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct...
conference paper 2011
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Sun, P. (author), Charbon, E. (author), Ishihara, R. (author)
The first single-photon avalanche diode (SPAD) image sensor fully integrated on flexible substrate is reported. The design consists of an array of 1024 quenched pixels with CMOS readout and addressing circuitries. The flexible substrate was made compatible with sol-gel polymer, which will be used to imprint microlenses by quartz mold to improve...
conference paper 2015
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Simulation, PIV data, and local models show characteristics and conditional statistics of turbulence either side and within interfacial layers [I] depending on the mean profile and the presence of resistive/porous walls. Key words; turbulence, interface structure, conditional statistics, numerical models
conference paper 2015
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Arslan, A. (author), Ishihara, R. (author), Derakhshandeh, J. (author), Beenakker, C.I.M. (author)
Design, fabrication and measurement results of single grain (SG) lateral PIN photodiodes and SG thin film transistors (TFT) are reported in this paper. Devices were developed to be used in indirect X-ray image sensor pixel design. We have controlled position of 6 ?m x 6 ?m silicon grains with excimer-laser crystallization of a-Si film. Lateral...
conference paper 2011
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Arslan, A. (author), Kahlert, H.J. (author), Oesterlin, P. (author), Mofrad, D.T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)
conference paper 2012
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Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), van Dijk, B.D. (author), van der Wilt, P.C. (author), Higashi, S. (author), Inoue, S. (author), Shimoda, T. (author), Metselaar, J.W. (author), Beenakker, C.I.M. (author)
journal article 2004
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Wu, H. (author), Vollebregt, S. (author), Emadi, A. (author), De Graaf, G. (author), Ishihara, R. (author), Wolffenbuttel, R.F. (author)
A thermopile based detector array has advantages when used for an infrared (IR) micro-spectrometer, as compared to an array of photon detector, such as flat spectral response and uncooled operation. A thermal detector requires a good absorber to achieve a high absorption coefficient in the spectral range of interest. Several solutions are...
journal article 2011
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Ishihara, R. (author), Baiano, A. (author), Chen, T. (author), Derakhshandeh, J. (author), Tajari Mofrad, M.R. (author), Danesh, M. (author), Saputra, N. (author), Long, J. (author), Beenakker, C.I.M. (author)
Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...
journal article 2009
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author)
Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with longpulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5?m, and the mobilities for electrons and holes are...
journal article 2012
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He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)
Clear preference of <100>- orientation in self-assembled poly- Si is observed for the first time not only in surface, but also in-plane orientations. This textured poly-Si can be used for TFT active channel, expecting a high performance with an excellent uniformity; or can be used as a seed layer for orientation controlling.
journal article 2006
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Arslan, A. (author), Kahlert, H.J. (author), Oesterlin, P. (author), Mofrad, D.T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)
625 nm thick a-Si layer was crystallized by using microsecond pulsed green laser with wavelength of 515 nm. At least 8 ?m size grains were formed using location controlled single grain technique at room temperature. Energy density window for crystallization and ablation were compared for pulse durations of 300 ns, 1000 ns and 1200 ns.
journal article 2012
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Chen, T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)
journal article 2008
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Baiano, A. (author), Ishihara, R. (author), Saputra, N. (author), Long, J. (author), Karaki, N. (author), Inoue, S. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)
Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement...
journal article 2007
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Chen, T. (author), Wu, M.Y. (author), Ishihara, R. (author), Nomura, K. (author), Kamiya, T. (author), Hosono, H. (author), Beenakker, C.I.M. (author)
In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at...
journal article 2011
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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)
We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...
journal article 2008
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Ishihara, R. (author), Chen, T. (author), Baiano, A. (author), Mofrad, M.R. (author), Beenakker, C.I.M. (author)
We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated...
journal article 2011
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He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, K. (author)
journal article 2006
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)
We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...
journal article 2014
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