Searched for:
(1 - 20 of 46)

Pages

document
Ishihara, R. (author), Trifunovic, M. (author), Van der Zwan, M. (author)
A method for forming a silicon layer using a liquid silane compound is described wherein said method comprises the steps of forming a first layer on a substrate, preferably a flexible substrate, said first layer comprising a (poly)silane; and, irradiating said first light ight comprising one or more wavelength within the range between 200 and...
patent 2014
document
Ishihara, R. (author), Baiano, A. (author)
The invention relates to a method for manufacturing a semiconductor device on a substrate provided with a silicon-oxide layer, by forming at least one hole in said silicon-oxide layer and depositing on said silicon-oxide layer an amorphous silicon-film which fills said at least one hole and covers a surrounding area of said hole, wherein said...
patent 2009
document
Ishihara, R. (author), Trifunovic, M. (author), Van der Zwan, M. (author)
A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by exposing said first (poly)silane layer to UV...
patent 2016
document
Ishihara, R. (author), Van der Zwan, M. (author)
A method for the manufacture of at least part of a thin-film device is described wherein, said method comprise: forming one or more indentations in a substrate, preferably a plastic substrate, an indentation comprising sidewalls and a base; filling at least one of said one or more indentations with a first ink, said first ink comprising a first...
patent 2013
document
Ishihara, R. (author), Van de Zwan, M. (author), Trifunovic, M. (author)
Methods for manufacture of a submicron semiconductor structure on a substrate are described. The method may comprise: forming at least one template layer over a support substrate; forming one or more template structures, preferably one or more recesses and/or mesas, in said template layer, said one or more template structures comprising one or...
patent 2014
document
Trifunovic, M. (author), Sberna, P.M. (author), Shimoda, T (author), Ishihara, R. (author)
Printing of electronics has been gaining a lot of attention over the past decade as a low cost alternative to conventional electronic fabrication methods. A significant development in this area was the possibility to print a silicon precursor, polydihydrosilane, which can directly be transformed into polycrystalline silicon by an excimer laser...
journal article 2017
document
Fujii, M. (author), Ishikawa, Y. (author), Ishihara, R. (author), Van der Cingel, J. (author), Mofrad, M.R.T. (author), Horita, M. (author), Uraoka, Y. (author)
In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C according to thermal calculation. Our analysis...
journal article 2013
document
He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)
Clear preference of <100>- orientation in self-assembled poly- Si is observed for the first time not only in surface, but also in-plane orientations. This textured poly-Si can be used for TFT active channel, expecting a high performance with an excellent uniformity; or can be used as a seed layer for orientation controlling.
journal article 2006
document
Esteban, Miguel (author), Portugal-Pereira, Joana (author), Mclellan, Benjamin C. (author), Bricker, J.D. (author), Farzaneh, Hooman (author), Djalilova, Nigora (author), Ishihara, Keiichi N. (author), Takagi, Hiroshi (author), Roeber, Volker (author)
In the aftermath of the Paris Agreements, many countries around the globe have pledged to reduce the amount of greenhouse gas emissions being released into the atmosphere. To do so, it is important that the amount of renewable energy in the electricity grid increases. However, there are worries of the capacity of the grid to cope with...
journal article 2018
document
Wu, H. (author), Vollebregt, S. (author), Emadi, A. (author), De Graaf, G. (author), Ishihara, R. (author), Wolffenbuttel, R.F. (author)
A thermopile based detector array has advantages when used for an infrared (IR) micro-spectrometer, as compared to an array of photon detector, such as flat spectral response and uncooled operation. A thermal detector requires a good absorber to achieve a high absorption coefficient in the spectral range of interest. Several solutions are...
journal article 2011
document
Ishihara, R. (author), Baiano, A. (author), Chen, T. (author), Derakhshandeh, J. (author), Tajari Mofrad, M.R. (author), Danesh, M. (author), Saputra, N. (author), Long, J. (author), Beenakker, C.I.M. (author)
Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...
journal article 2009
document
Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author)
Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with longpulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5?m, and the mobilities for electrons and holes are...
journal article 2012
document
Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...
journal article 2007
document
Arslan, A. (author), Kahlert, H.J. (author), Oesterlin, P. (author), Mofrad, D.T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)
625 nm thick a-Si layer was crystallized by using microsecond pulsed green laser with wavelength of 515 nm. At least 8 ?m size grains were formed using location controlled single grain technique at room temperature. Energy density window for crystallization and ablation were compared for pulse durations of 300 ns, 1000 ns and 1200 ns.
journal article 2012
document
Saputra, N. (author), Danesh, M. (author), Baiano, A. (author), Ishihara, R. (author), Long, J.R. (author), Karaki, N. (author), Inoue, S. (author)
journal article 2008
document
Sberna, P.M. (author), Trifunovic, M. (author), Ishihara, R. (author)
Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Sibased inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of...
journal article 2017
document
Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), van Dijk, B.D. (author), van der Wilt, P.C. (author), Higashi, S. (author), Inoue, S. (author), Shimoda, T. (author), Metselaar, J.W. (author), Beenakker, C.I.M. (author)
journal article 2004
document
Chen, T. (author), Wu, M.Y. (author), Ishihara, R. (author), Nomura, K. (author), Kamiya, T. (author), Hosono, H. (author), Beenakker, C.I.M. (author)
In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at...
journal article 2011
document
Rana, V. (author), Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), Inoue, S. (author), Shimoda, T. (author), Metselaar, W. (author), Beenakker, K. (author)
journal article 2005
document
Ishihara, R. (author), Chen, T. (author), Baiano, A. (author), Mofrad, M.R. (author), Beenakker, C.I.M. (author)
We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated...
journal article 2011
Searched for:
(1 - 20 of 46)

Pages