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Cui, Z. (author), Zhang, Yingying (author), Yang, Qun (author), Zhang, G.Q. (author), Chen, Xianping (author)
Interfacial properties of Cu/SiO<sub>2</sub> in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO<sub>2</sub>. The...
conference paper 2018