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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions,...
conference paper 2015
document
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015