Enhanced superconductivity in atomically thin TaS 2

The ability to exfoliate layered materials down to the single layer limit has presented the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of...

Thickness dependent interlayer transport in vertical MoS₂ Josephson junctions

Wereport on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS₂)-molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS₂ devices....

Quantum paraelectricity probed by superconducting resonators

Superconducting coplanar waveguide (CPW) resonators are powerful and versatile tools used in areas ranging from radiation detection to circuit quantum electrodynamics. Their potential for low intrinsic losses makes them attractive as sensitive probes of electronic properties of bulk materials and thin films. Here we use superconducting MoRe...

Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′-MoS2

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization...

Investigating Laser-Induced Phase Engineering in MoS₂ Transistors

Phase engineering of MoS₂ transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS₂ flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS&#x2082...

Multi-terminal electronic transport in boron nitride encapsulated TiS₃ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS₃) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in...

Weak localization in boron nitride encapsulated bilayer MoS2

We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase coherence shows improvement...

Tunneling spectroscopy of localized states of WS2 barriers in vertical van der Waals heterostructures

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here we study localized states in WS2 and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/ WS2/metal. The...

Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor

We demonstrate charge detection with single-electron resolution at high readout frequency using a silicon field-effect transistor (FET) integrated with double resonant circuits. A FET, whose channel of 10-nm width enables a single electron to be detected at room temperature, is connected to resonant circuits composed of coupled inductors and...