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Beukman, A.J.A. (author), de Vries, F.K. (author), van Veen, J. (author), Skolasinski, R.J. (author), Wimmer, M.T. (author), Qu, F. (author), De Vries, David T. (author), Nguyen, Binh Minh (author), Kouwenhoven, Leo P. (author)
The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in...
journal article 2017
document
Nguyen, Binh Minh (author), Kiselev, Andrey A. (author), Noah, Ramsey (author), Yi, Wei (author), Qu, F. (author), Beukman, A.J.A. (author), de Vries, F.K. (author), van Veen, J. (author), Nadj-Perge, S. (author), Kouwenhoven, Leo P. (author), Kjaergaard, Morten (author), Suominen, Henri J. (author), Nichele, Fabrizio (author), Marcus, Charles M. (author), Manfra, Michael J. (author), Sokolich, Marko (author)
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the...
journal article 2016