Searched for:
(1 - 1 of 1)
Xu, C. (author)
The paper investigates two-sided capacitance-voltage (C-V) technique for application in doping profile characterization of Si ultra shallow p+-n junctions. Stepped doping profile in the n region is designed for the accurate determination of xn0, a crucial parameter for the extraction of the doping profile in the p region. Medici simulations are...
master thesis 2009