"uuid","repository link","title","author","contributor","publication year","abstract","subject topic","language","publication type","publisher","isbn","issn","patent","patent status","bibliographic note","access restriction","embargo date","faculty","department","research group","programme","project","coordinates"
"uuid:1ef0a0b6-81cc-4ee2-b1a8-7baa3f30d327","http://resolver.tudelft.nl/uuid:1ef0a0b6-81cc-4ee2-b1a8-7baa3f30d327","A 155W −95.6 dB THD+N GaN-based Class-D Audio Amplifier With LC Filter Nonlinearity Compensation","Chen, Minggang (Southeast University); Zhang, H. (TU Delft Electronic Components, Technology and Materials); Fan, Q. (TU Delft Microelectronics)","","2023","Silicon MOSFETs-based medium-power (< 50W) Class-D amplifiers (CDAs) switching in the MHz range have gained popularity in recent years, which achieves better linearity thanks to a higher loop gain in the audio band while enabling the use of LC filters with higher cut-off frequencies. However, for high-power (>100 W) CDAs, such switching frequency and high load current could lead to significant power loss. Furthermore, in the presence of a large current and voltage applied to the load, the linearity of the system can quickly degrade due to LC filter component voltage/current dependency. Without any LC filter nonlinearity compensation technique, LC components with high voltage/current rating must be used to reach high system linearity, which are often expensive and bulky. This paper presents a CDA using a GaN-based output stage to achieve high switching frequency and good efficiency simultaneously, and an integrated controller implemented in a 180nm CMOS technology to compensate for the LC filter nonlinearity. Switching at 1.8 MHz, the CDA can deliver a maximum of 155W from a 50V supply into a $4\Omega$ load with a peak efficiency of 91.7%. It achieves a peak THD+N of −95.6 dB (0.0017%) while allowing the use of cheaper and smaller nonlinear LC components.","Audio power amplifier; Class-D amplifier; GaN; THD; feedback-after-LC","en","conference paper","IEEE","","","","","Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.","","2023-12-01","","Microelectronics","Electronic Components, Technology and Materials","","",""
"uuid:fa187565-2f24-4b6b-9360-ae177687e9ab","http://resolver.tudelft.nl/uuid:fa187565-2f24-4b6b-9360-ae177687e9ab","Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation","Kang, Xuanwu (Fudan University; Chinese Academy of Sciences); Sun, Y. (TU Delft Electronic Components, Technology and Materials; Shenzhen Institute of Wide-bandgap Semiconductors; Chinese Academy of Sciences); Zheng, Yingkui (Chinese Academy of Sciences); Wei, Ke (Chinese Academy of Sciences); Wu, Hao (Fudan University; Chinese Academy of Sciences); Zhao, Yuanyuan (Chinese Academy of Sciences); Liu, Xinyu (Chinese Academy of Sciences); Zhang, Kouchi (Fudan University)","","2021","In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON/Iscriptscriptstyle OFF of 1012 with a low leakage current of ∼ 10-9 A/cm2@-10 V, high forward current density of 5.2 kA/cm2 at 3 V in dc, a low differential specific ON-resistance (Rscriptscriptstyle ONsp) of 0.3 m Ω cm2, and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) I-V test was carried out and 53 kA/cm2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.","GaN; high forward current density; leakage; mesa; quasi; Schottky barrier diode (SBD); transmission-line-pulse (TLP); vertical.","en","journal article","","","","","","","","","","","Electronic Components, Technology and Materials","","",""
"uuid:e0a4f1dd-2798-442c-b5c1-e139b49321ac","http://resolver.tudelft.nl/uuid:e0a4f1dd-2798-442c-b5c1-e139b49321ac","Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics","Sun, Y. (TU Delft Electronic Components, Technology and Materials; Shenzhen Institute of Wide-bandgap Semiconductors; Chinese Academy of Sciences); Kang, Xuanwu (Chinese Academy of Sciences); Zheng, Yingkui (Chinese Academy of Sciences); Wei, Ke (Chinese Academy of Sciences); Li, Pengfei (Chinese Academy of Sciences); Wang, Wenbo (Shenzhen Institute of Wide-bandgap Semiconductors); Liu, Xinyu (Chinese Academy of Sciences); Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)","","2020","The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V.","Dry etch; GaN; Inductively coupled plasma (ICP); Mesa; Quasi-vertical; Schottky barrier diode (SBD); Sidewall profile","en","journal article","","","","","","","","","","","Electronic Components, Technology and Materials","","",""
"uuid:a6d85734-05ae-4808-ab45-51a4dbd424f0","http://resolver.tudelft.nl/uuid:a6d85734-05ae-4808-ab45-51a4dbd424f0","Suspended AlGaN/GaN HEMT NO2 Gas Sensor Integrated with Micro-heater","Sun, J. (TU Delft Electronic Components, Technology and Materials; China Research Institute); Sokolovskij, R. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology; State Key Laboratory of Solid State Lighting); Iervolino, E. (TU Delft Electronic Components, Technology and Materials); Liu, Zewen (Tsinghua University); Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials); Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)","","2019","We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nano-film modified gate for nitrogen dioxide (NO2) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the HEMT self-heating are studied and modeled. A significant detection is observed for exposure to a low concentration of 100 ppb NO2 /N2 at ∼300 °C. For a 1 ppm NO2 gas, a high sensitivity of 1.1% with a response (recovery) time of 88 second (132 second) is obtained. The effects of relative humidity and temperature on the gas sensor response properties in air are also studied. Based on the excellent sensing performance and inherent advantages of low power consumption, the investigated sensor provides a viable alternative high performance NO2 sensing applications. It is suitable for continuous environmental monitoring system or high temperature applications.","GaN; HEMT; micro-heater; NO sensor; WO","en","journal article","","","","","","Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.","","2021-08-02","","","Electronic Components, Technology and Materials","","",""
"uuid:e077325a-2a09-41f4-b2f1-4cd43bc66dc6","http://resolver.tudelft.nl/uuid:e077325a-2a09-41f4-b2f1-4cd43bc66dc6","Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating","Sun, J. (TU Delft Electronic Components, Technology and Materials); Zhan, Teng (Chinese Academy of Sciences; State Key Laboratory of Solid State Lighting); Liu, Zewen (Tsinghua University); Wang, Junxi (Chinese Academy of Sciences; State Key Laboratory of Solid State Lighting); Yi, Xiaoyan (Chinese Academy of Sciences; State Key Laboratory of Solid State Lighting); Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials); Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials; State Key Laboratory of Solid State Lighting)","","2019","This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 s by DC heating to 116 s by 50 Hz pulsed heating at the same power (280 mW). With the same pulse duty cycle and a 50 Hz pulsed heating frequency, a reduction of 30%-45% in decay time is measured compared to DC heating.","pulsed heating; AlGaN; GaN; UV detector","en","journal article","","","","","","Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.","","2021-08-02","","","Electronic Components, Technology and Materials","","",""
"uuid:6db72bfd-c8a5-4cc3-a639-20768c8a0863","http://resolver.tudelft.nl/uuid:6db72bfd-c8a5-4cc3-a639-20768c8a0863","Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)","Sun, Y. (TU Delft Electronic Components, Technology and Materials); Kang, Xuanwu (Chinese Academy of Sciences); Zheng, Yingkui (Chinese Academy of Sciences); Lu, Jiang (Chinese Academy of Sciences); Tian, Xiaoli (Chinese Academy of Sciences); Wei, Ke (Chinese Academy of Sciences); Wu, Hao (Chinese Academy of Sciences); Wang, Wenbo; Liu, Xinyu (Chinese Academy of Sciences); Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)","","2019","Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.","Edge termination techniques; GaN; Schottky barrier diode (SBD); Vertical power devices","en","review","","","","","","","","","","","Electronic Components, Technology and Materials","","",""
"uuid:b2fd8457-c1e8-4807-8a37-cecb72173273","http://resolver.tudelft.nl/uuid:b2fd8457-c1e8-4807-8a37-cecb72173273","Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection","Sokolovskij, R. (State Key Laboratory of Solid State Lighting); Iervolino, E. (Southern University of Science and Technology); Zhao, Changhui (Southern University of Science and Technology); Wang, F. (Southern University of Science and Technology); Yu, Hongyu (Southern University of Science and Technology); Santagata, F. (TU Delft Electronic Components, Technology and Materials); Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials); Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)","","2017","This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.","AlGaN; GaN; H2 sensor; HEMT; high temperature; sensor layout","en","conference paper","IEEE","","","","","Accepted author manuscript","","","","","Electronic Components, Technology and Materials","","",""
"uuid:117ba5a3-2ac1-4fc0-966f-9783e6d42ab7","http://resolver.tudelft.nl/uuid:117ba5a3-2ac1-4fc0-966f-9783e6d42ab7","Mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals","Qin, Hongbo (Guilin University of Electronic Technology); Luan, Xinghe (Guilin University of Electronic Technology); Feng, Chuang (Guilin University of Electronic Technology); Yang, Daoguo (Guilin University of Electronic Technology); Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials; Guilin University of Electronic Technology)","","2017","For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and < 111 >, respectively, while they are in the orientations < 111 > and < 100 > for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol-1 K-1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of states in the orbital hybridization between Ga and N atoms of wurtzite GaN are much higher, indicating more electrons participate in forming Ga-N ionic bonds in the wurtzite GaN.","Anisotropy; Electronic property; First principle; GaN; Mechanical property; Thermodynamic property","en","journal article","","","","","","","","","","","Electronic Components, Technology and Materials","","",""